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| Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.031C IR2117 SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout n CMOS Schmitt-triggered inputs with pull-down n Output in phase with input Product Summary VOFFSET IO+/VOUT ton/off (typ.) 600V max. 200 mA / 420 mA 10 - 20V 125 & 105 ns Description The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts. Packages Typical Connection up to 600V VCC IN VCC IN COM VB HO VS TO LOAD To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-75 Previous Datasheet Index Next Data Sheet IR2117 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8. Symbol VB VS VHO VCC VIN dVs/dt PD RJA TJ TS TL Parameter Definition High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage Allowable Offset Supply Voltage Transient (Figure 2) Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Value Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -- -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 50 1.0 0.625 125 200 150 150 300 Units V V/ns W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol VB VS VHO VCC VIN TA Parameter Definition High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage Ambient Temperature Value Min. VS + 10 Note 1 VS 10 0 -40 Max. VS + 20 600 VB 20 VCC 125 Units V C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. B-76 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL To Order Previous Datasheet Index Next Data Sheet IR2117 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol t on t off tr tf Parameter Definition Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Value Min. Typ. Max. Units Test Conditions -- -- -- -- 125 105 80 40 200 180 130 65 ns VS = 0V VS = 600V Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol VIH Parameter Definition Logic "1" Input Voltage Value Min. Typ. Max. Units Test Conditions 6.4 9.5 12.6 -- -- -- -- -- -- -- -- -- 50 70 20 -- 8.6 8.2 8.6 8.2 250 500 -- -- -- 3.8 6.0 8.3 100 100 50 240 340 40 1.0 9.6 9.2 9.6 9.2 -- -- mA VO = 0V VIN = VCC , PW 10 s VO = 15V, VIN = 0V PW 10 s V A mV V VCC = 10V VCC = 15V VCC = 20V VCC = 10V VCC = 15V VCC = 20V IO = 0A IO = 0A VB = VS = 600V VIN = 0V or VCC VIN = 0V or VCC VIN = VCC VIN = 0V VIL Logic "0" Input Voltage -- -- -- VOH VOL I LK I QBS IQCC IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+ I O- High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Quiescent VCC Supply Current Logic "1" Input Bias Current Logic "0" Input Bias Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold VCC Supply Undervoltage Positive Going Threshold VCC Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current -- -- -- -- -- -- -- 7.6 7.2 7.6 7.2 200 420 To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-77 Previous Datasheet Index Next Data Sheet IR2117 Functional Block Diagram VCC UV DETECT HV LEVEL SHIFT VB R R S Q HO PULSE FILTER IN PULSE GEN UV DETECT VS COM Lead Definitions Lead Symbol Description VCC IN COM VB HO VS Logic and gate drive supply Logic input for gate driver output (HO), in phase with HO Logic ground High side floating supply High side gate drive output High side floating supply return Lead Assignments 8 Lead DIP S0-8 IR2117 Part Number B-78 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL IR2117S To Order Previous Datasheet Index Next Data Sheet IR2117 Device Information Process & Design Rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 114 70 X 77 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Materials 800A Poly Silicon 4 m 6 m 5000A Al - Si (Si: 1.0% 0.1%) 6 m 9 m 20,000A 8 m X 8 m PSG (SiO2) 1.5 m PSG (SiO2) 1.5 m Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil / 1.3 mil) Cu Ag Pb : Sn (37 : 63) 8 Lead PDIP / SO-8 EME6300 / MP150 / MP190 To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-79 Previous Datasheet Index Next Data Sheet IR2117 IN 2 HO Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit 50% 50% IN ton 3 tr 90% toff 90% tf HO Figure 3. Switching Time Test Circuit 10% 10% Figure 4. Switching Time Waveform Definition B-80 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL To Order Previous Datasheet Index Next Data Sheet IR2117 150 320V 140V 150 320V 140V 125 Junction Temperature (C) Junction Temperature (C) 125 100 100 10V 75 10V 75 50 50 25 25 0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 Figure 5. IR2117 TJ vs. Frequency (IRFBC20) RGATE = 33, VCC = 15V Figure 6. IR2117 TJ vs. Frequency (IRFBC30) RGATE = 22 , VCC = 15V 150 320V 140V 10V 150 320V 140V 10V 125 Junction Temperature (C) Junction Temperature (C) 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 125 100 100 75 75 50 50 25 25 0 1E+2 0 1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6 Figure 7. IR2117 TJ vs. Frequency (IRFBC40) RGATE = 15, VCC = 15V Figure 8. IR2117 TJ vs. Frequency (IRFPE50) RGATE = 10 , VCC = 15V To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-81 |
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